參數(shù)資料
型號: IXTP36N30P
廠商: IXYS CORP
元件分類: JFETs
英文描述: PolarHT Power MOSFET
中文描述: 36 A, 300 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 589K
代理商: IXTP36N30P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 36N30P IXTP 36N30P
IXTQ 36N30P
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,259,123B1 6,306,728B1 6,683,344
6,534,343
6,583,505
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
12
22
S
C
iss
C
oss
C
rss
2250
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
370
90
pF
pF
t
d(on)
t
r
t
d(off)
t
f
24
30
97
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 10
(External)
28
ns
Q
g(on)
Q
gs
Q
gd
70
17
35
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.42K/W
(TO-3P)
(TO-220)
0.21
0.25
K/W
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
36
A
I
SM
Repetitive
90
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
300
μ
s, duty cycle d
2 %
1.5
V
t
rr
I
= 25 A
-di/dt = 100 A/
μ
s
V
R
= 100 V
250
ns
Q
RM
2.0
μ
C
TO-3P (IXTQ) Outline
Pins:
1 - Gate
2 - Drain
TO-220 (IXTA) Outline
Dim.
Millimeter
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
Inches
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
TO-263 (IXTP) Outline
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