參數(shù)資料
型號(hào)： IXTK180N15
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Current MegaMOSTMFET
中文描述： 180 A, 150 V, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： TO-264AA, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 85K
代理商： IXTK180N15
2002 IXYS All rights reserved
Advance Technical Information
Symbol
Test Conditions
Characteristic Values
Min. Typ.
(T
J
= 25°C unless otherwise specified)
Max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
150
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
4.0
V
I
GSS
V
GS
= ±20 V DC, V
DS
= 0
±200
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
50
μ
A
mA
3
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300 ms, duty cycle d
≤
2%
10 m
Features
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
International standard package
Fast switching times
Applications
Motor controls
DC choppers
Switched-mode power supplies
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
98878A (02/02)
High Current
MegaMOS
TM
FET
N-Channel Enhancement Mode
Symbol
Test conditions
Maximum ratings
V
DSS
V
DGR
T
J
T
J
= 25°C to 150°C
= 25°C to 150°C; R
GS
= 1.0 M
150
V
150
V
V
GS
V
GSM
Continuous
±20
V
Transient
±30
V
I
D25
I
D(RMS)
I
DM
I
AR
T
C
External lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
= 25
°
C MOSFET chip capability
180
75
720
90
A
A
A
A
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
= 25
°
C
64
3.0
mJ
J
I
S
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
560
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Mounting torque
0.7/6
Nm/lb.in.
TO-264
10
g
TO-264 AA (IXTK)
S
G
D
D (TAB)
G = Gate
S = Source
D
Tab = Drain
= Drain
IXTK 180N15
V
DSS
I
D25
R
DS(on)
=
=
=
150 V
180 A
10 m
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTK180N15P 功能描述:MOSFET 180 Amps 150V 0.01 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK200N10L2 功能描述:MOSFET L2 Linear Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK200N10P 功能描述:MOSFET 200 Amps 100V 0.0075 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK20N140 功能描述:MOSFET High Voltage Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK20N150 功能描述:MOSFET 1200V High Voltage Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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