參數(shù)資料
型號： IXTN21N100
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Voltage MegaMOSTMFETs
中文描述： 21 A, 1000 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SOT-227B, MINIBLOC-4
文件頁數(shù)： 1/4頁
文件大?。?/td> 137K
代理商： IXTN21N100
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
IXTK
IXTN
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
1000
1000
1000
1000
V
V
±
20
±
30
±
20
±
30
V
V
T
C
= 25
°
C, Chip capability
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
21
84
21
84
A
A
500
520
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
-
°
C
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
-
-
2500
3000
V~
V~
M
d
0.9/6
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
-
Weight
10
30
g
IXTK 21N100
IXTN 21N100
V
DSS
I
D25
R
DS(on)
= 0.55
= 1000 V
= 21 A
TO-264 AA (IXTK)
S
G
D
D
S
G
S
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D = Drain
TAB = Drain
S
G
S
D
N-Channel, Enhancement Mode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 6 mA
V
DS
= V
GS
, I
D
= 500
μ
A
V
GS
=
±
20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1000
V
V
2
4.5
±
200
nA
T
J
= 25
°
C
T
J
= 125
°
C
500
μ
A
mA
2
R
DS(on)
0.55
92808I(5/97)
Features
l
International standard packages
l
JEDEC
TO-264,
epoxy
meet
UL
94
V-0
flammability classification
l
miniBLOC,
(ISOTOP-compatible) with
Aluminium nitride isolation
l
Low R
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Low package inductance
Applications
l
DC-DC converters
l
Synchronous rectification
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
Temperature and lighting controls
Advantages
l
Easy to mount
l
Space savings
l
High power density
D (TAB)
miniBLOC, SOT-227 B
E153432
High Voltage
MegaMOS
TM
FETs
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTN21N100 制造商:IXYS Corporation 功能描述:MOSFET N SOT-227B
IXTN22N100L 功能描述:MOSFET 22 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTN30N100L 功能描述:MOSFET 30 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTN320N10T 功能描述:MOSFET 320 Amps 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTN32P60P 功能描述:MOSFET -32 Amps -600V 0.350 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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