參數(shù)資料
型號(hào)： IXSP15N120B
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： S Series - Improved SCSOA Capability
中文描述： 30 A, 1200 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù)： 2/2頁
文件大?。?/td> 84K
代理商： IXSP15N120B
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
.625
.110
.055
.070
.015
0
0
R
0.46
0.74
.018
.029
Pins:
1 - Gate
3 - Emitter
2 - Collector
4 - Collector
Bottom Side
TO-220 AB Dimensions
Symbol
(T
J
= 25
°
C, unless otherwise specified)
Test Conditions
Characteristic Values
Min. Typ.
Max.
g
fs
I
C
Note2
= I
C90
; V
CE
= 10 V,
7
9.5
S
C
ies
C
oes
C
res
1400
98
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
37
pF
Q
g
Q
ge
Q
gc
57
14
25
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
30
25
ns
ns
ns
ns
mJ
148
160
1.75
280
320
3.0
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
30
25
1.1
265
298
3.1
ns
ns
mJ
ns
ns
mJ
R
thJC
R
thCK
0.83
K/W
K/W
TO-220
0.5
Inductive load, T
J
= 25
°
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 960 V, R
G
= R
off
= 10
Note3
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 960 V, R
G
= R
off
= 10
Note3
IXSA 15N120B
IXSP 15N120B
Min. Recommended Footprint
(Dimensions in inches and mm)
Notes: 1.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2.
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
3.
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
.
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