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參數(shù)資料
| 型號(hào)： | IXGH40N120A2 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 中文描述： | 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 172K |
| 代理商： | IXGH40N120A2 |
2005 IXYS All rights reserved
IXGH 40N120A2
IXGT 40N120A2
High Voltage IGBT
Low V
CE(sat)
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J = 25°C to 150°C
1200
V
V
CES
T
J = 25°C to 150°C
1200
V
V
GES
Continuous
± 20
V
V
GEM
Transient
± 30
V
I
C25
T
C = 25°C, IGBT chip capability
75
A
I
C110
T
C = 110°C
40
A
I
CM
T
J ≤ 150°C, tp < 300 μs
160
A
SSOA
V
GE = 15 V, TVJ = 150°C, RG = 5 Ω
I
CM = 80
A
(RBSOA)
Clamped inductive load, V
CE < 960 V
P
C
T
C = 25°C
360
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 seconds
T
SOLD
Plastic body for 10 seconds
260
°C
M
d
Mounting torque (ixgh)
1.3/10
Nm/lb.in.
Weight
(IXGH)
6.0
g
(IXGT)
4.0
g
DS99509 (12/05)
Features
International standard packages
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Capacitor discharge
IXGH 40N120A2
IXGT 40N120A2
V
CES
= 1200 V
I
C25
=75 A
V
CE(sat) ≤
≤≤≤≤ 2.0 V
G = Gate
C = Collector
E = Emitter
TAb = Collector
Symbol Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min. Typ. Max.
V
GE(th)
I
C = 1 mA, VGE = 0 V
1200
V
V
GE(th)
I
C = 250 μA, VCE = VGE
3.0
5.0 V
I
CES
V
CE = VCES
50
μA
V
GE = 0 V
T
J = 125°C
1mA
I
GES
V
CE = 0 V, VGE = ±20 V
± 100 nA
V
CE(sat)
I
C = IC110, VGE = 15V
2.0 V
G
C
E
TO-247 (IXFH)
(TAB)
TO-268 (IXGT)
G
E
C (TAB)
Preliminary Data Sheet
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH40N120B2D1 | 功能描述:IGBT 晶體管 IGBT, Diode 1200V, 75A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH40N120C3 | 功能描述:IGBT 晶體管 75Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH40N120C3D1 | 功能描述:IGBT 晶體管 75Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH40N30 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGH40N30A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
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