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參數(shù)資料
| 型號(hào)： | IXGH32N170A |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 中文描述： | 32 A, 1700 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 572K |
| 代理商： | IXGH32N170A |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
P
TO-247 AD Outline
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
90; VCE = 10 V
16
26
S
Note 2
C
ies
3700
pF
C
oes
V
CE = 25 V, VGE = 0 V, f = 1 MHz
180
pF
C
res
43
pF
Q
g
155
nC
Q
ge
I
C = IC90, VGE = 15 V, VCE = 0.5 VCES
28
nC
Q
gc
49
nC
t
d(on)
46
ns
t
ri
57
ns
t
d(off)
260
500
ns
t
fi
50
100
ns
E
off
1.5
2.6 mJ
t
d(on)
48
ns
t
ri
59
ns
E
on
4.0
mJ
t
d(off)
300
ns
t
fi
70
ns
E
off
2.4
mJ
R
thJC
0.35 K/W
R
thCK
(TO-247)
0.25
K/W
Inductive load, T
J = 125°
°°°°C
I
C = IC25, VGE = 15 V
R
G = 2.7 , VCE = 0.5 VCES
Note 3
Inductive load, T
J = 25°
°°°°C
I
C = IC25, VGE = 15 V
R
G = 2.7 , VCE = 0.5 VCES
Note 3
IXGH 32N170A
IXGT 32N170A
TO-268 Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e
5.45 BSC
.215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3
0.25 BSC
.010 BSC
L4
3.80
4.10
.150
.161
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t
≤ 300 s, duty cycle ≤ 2 %
3. Switching times may increase for V
CE (Clamp) > 0.8 VCES, higher TJ or
increased R
G.
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