參數(shù)資料
型號(hào): IXFR10N100F
廠商: IXYS CORP
元件分類: JFETs
英文描述: HiPerFET Power MOSFETs ISOPLUS247
中文描述: 9 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOPLUS247, 3 PIN
文件頁(yè)數(shù): 2/2頁(yè)
文件大小: 91K
代理商: IXFR10N100F
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= I
T
Note 1
8
12
S
C
iss
C
oss
C
rss
2700
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
305
pF
93
pF
t
d(on)
t
r
t
d(off)
t
f
12
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
R
G
= 2
(External)
9.8
ns
31
ns
12
ns
Q
g(on)
Q
gs
Q
gd
77
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
16
nC
42
nC
R
thJC
R
thCK
0.50
K/W
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
12
A
I
SM
Repetitive;
pulse width limited by T
JM
48
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
0.8
μ
C
I
RM
7
A
I
F
= 25 A,-di/dt = 100 A/
μ
s, V
R
= 100 V
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
20.80
15.75
5.45 BSC
19.81
3.81
5.59
4.32
Inches
Min.
.190
.090
.075
.045
.075
.115
.024
.819
.620
.215 BSC
.780
.150
.220 0.244
.170
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
21.34
16.13
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
20.32
4.32
6.20
4.83
.800
.170
.190
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline
IXFR 10N100F
IXFR 12N100F
Note: 1. Pulse test, t
300
μ
s, duty cycle d
2 %
2. I
T
test current:
IXFR10N100
IXFR12N100
I
T
= 5A
I
T
= 6A
相關(guān)PDF資料
PDF描述
IXFR12N100F HiPerFET Power MOSFETs ISOPLUS247
IXFR34N80 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.24Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFX30N100Q2 HiPerFET Power MOSFETs Q-Class
IXGA16N60C2 HiPerFASTTM IGBT C2-Class High Speed IGBT
IXGA16N60C2D1 HiPerFASTTM IGBT C2-Class High Speed IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR10N100Q 功能描述:MOSFET MOSFET w/FAST Intrinsic Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR120N20 功能描述:MOSFET 200V 105A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR12N100 功能描述:MOSFET N-CH 1000V 10A ISOPLUS247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HiPerFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IXFR12N100F 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR12N100Q 功能描述:MOSFET 12 Amps 1000V 1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube