參數(shù)資料
型號(hào): IXFR10N100F
廠商: IXYS CORP
元件分類: JFETs
英文描述: HiPerFET Power MOSFETs ISOPLUS247
中文描述: 9 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOPLUS247, 3 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 91K
代理商: IXFR10N100F
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
T
C
= 25
°
C
12N100
10N100
12N100
10N100
12N100
10N100
10
A
A
A
A
A
A
9
I
DM
T
C
= 25
°
C, Pulse width limited by T
JM
48
40
12
10
I
AR
T
C
= 25
°
C
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
31
mJ
1
J
dv/dt
I
S
T
J
150
°
C, R
G
= 2
I
, di/dt
100 A/
μ
s, V
DD
V
DSS
5
V/ns
P
D
T
C
= 25
°
C
250
W
T
J
T
JM
T
stg
-40 ... +150
°
C
°
C
°
C
150
-40 ... +150
T
L
1.6 mm (0.063 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
1000
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20 V, V
DS
= 0
3.0
5.5 V
±
100 nA
I
DSS
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
D
= I
T
Notes 1 & 2
T
J
= 25
°
C
T
J
= 125
°
C
12N100
10N100
50
μ
A
1.5 mA
R
DS(on)
1.05
1.2
98934(7/02)
ISOPLUS 247
TM
(IXFR)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
F-Class: MegaHertz Switching
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Features
z
RF capable MOSFETs
z
Double metal process for low gate
resistance
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
Fast intrinsic rectifier
Applications
z
DC-DC converters
z
Switched-mode and resonant-mode
power supplies, >500kHz switching
z
DC choppers
z
13.5 MHz industrial applications
z
Pulse generation
z
Laser drivers
z
RF amplifiers
Advantages
z
ISOPLUS 247
TM
package for clip or
spring mounting
z
Space savings
z
High power density
V
DSS
I
D25
10 A
9 A
R
DS(on)
1.05
1.20
IXFR 12N100F 1000 V
IXFR 10N100F 1000 V
t
rr
250 ns
Isolated back surface*
Preliminary Data Sheet
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