參數(shù)資料
型號(hào)： IXFR34N80
廠商： IXYS CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.24Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
中文描述： 28 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 59K
代理商： IXFR34N80
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
800
800
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C (MOSFET chip capability)
T
C
= 25
°
C, Note 1
T
C
= 25
°
C
28
A
A
A
600
150
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
60
mJ
3
J
I
S
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
400
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
50/60 Hz, RMS
t = 1 min
2500
V~
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
150
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20 V, V
DS
= 0
2.0
4.0 V
±
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 2, 3
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
2 mA
0.24
R
DS(on)
Single MOSFET Die
Avalanche Rated
98674A (02/00)
ISOPLUS 247
TM
E153432
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Backside)
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<25pF)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
G = Gate
S = Source
D = Drain
* Patent pending
IXFR 34N80
V
DSS
I
D25
R
DS(on)
= 0.24
t
rr
≤
250 ns
= 800
= 28
V
A
Isolated backside*
G
D
S
Preliminary Data Sheet
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR36N50P 功能描述:MOSFET 500V 36A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR36N60P 功能描述:MOSFET 600V 20A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR38N80Q2 功能描述:MOSFET 38 Amps 800V 0.24 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR38N80Q2_08 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFET Q2-Class
IXFR40N50Q2 功能描述:MOSFET 500V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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