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參數(shù)資料
| 型號(hào)： | IS42VS16160D-75BLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封裝： | 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, BGA-54 |
| 文件頁(yè)數(shù)： | 2/61頁(yè) |
| 文件大小： | 939K |
| 代理商： | IS42VS16160D-75BLI |
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10
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
04/21/09
IS42VS83200D, IS42VS16160D
IS45VS83200D, IS45VS16160D
Current State
CS
RAS CAS
WE
Address
Command
Action
Idle
H
X
DESL
NoporPowerDown(2)
L
H
X
NOP
NoporPowerDown(2)
L
H
L
X
BST
NoporPowerDown
L
H
L
H
BA,CA,A10
READ/READA
ILLEGAL(3)
L
H
L
A,CA,A10
WRIT/WRITA
ILLEGAL(3)
L
H
BA,RA
ACT
Rowactivating
L
H
L
BA,A10
PRE/PALL
Nop
L
H
X
REF/SELF
AutorefreshorSelf-refresh(4)
L
OC,BA1=L
MRS
Moderegisterset
RowActive
H
X
DESL
Nop
L
H
X
NOP
Nop
L
H
L
X
BST
Nop
L
H
L
H
BA,CA,A10
READ/READA
Beginread(5)
L
H
L
BA,CA,A10
WRIT/WRITA
Beginwrite(5)
L
H
BA,RA
ACT
ILLEGAL(3)
L
H
L
BA,A10
PRE/PALL
Precharge
Prechargeallbanks(6)
L
H
X
REF/SELF
ILLEGAL
L
OC,BA
MRS
ILLEGAL
Read
H
X
DESL
Continuebursttoendto
Rowactive
L
H
X
NOP
ContinuebursttoendRow
Rowactive
L
H
L
X
BST
Burststop,Rowactive
L
H
L
H
BA,CA,A10
READ/READA
Terminateburst,
begin new read (7)
L
H
L
BA,CA,A10
WRIT/WRITA
Terminateburst,
begin write (7,8)
L
H
BA,RA
ACT
ILLEGAL(3)
L
H
L
BA,A10
PRE/PALL
Terminateburst
Precharging
L
H
X
REF/SELF
ILLEGAL
L
OC,BA
MRS
ILLEGAL
Write
H
X
DESL
Continuebursttoend
Writerecovering
L
H
X
NOP
Continuebursttoend
Writerecovering
L
H
L
X
BST
Burststop,Rowactive
L
H
L
H
BA,CA,A10
READ/READA
Terminateburst,startread:
DetermineAP(7,8)
L
H
L
BA,CA,A10
WRIT/WRITA
Terminateburst,newwrite:
DetermineAP(7)
L
H
BA,RA
RAACT
ILLEGAL(3)
L
H
L
BA,A10
PRE/PALL
TerminateburstPrecharging(9)
L
H
X
REF/SELF
ILLEGAL
L
OC,BA
MRS
ILLEGAL
FUNCTIONAL TRUTH TABLE
Note:H=Vih,L=Vilx=VihorVil,V=ValidData,BA=BankAddress,CA+ColumnAddress,RA=RowAddress,OC=Op-Code
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42VS16400C1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-10TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42VS16400C1-12T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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