參數(shù)資料
型號: IS42S81600A-7TI
英文描述: 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述: 16Meg × 8,8Meg x16
文件頁數(shù): 56/65頁
文件大小: 556K
代理商: IS42S81600A-7TI
60
XMEGA C3 [DATASHEET]
8361D–AVR–07/2013
LDS
Rd, k
Load Direct from data space
Rd
(k)
None
2
LD
Rd, X
Load Indirect
Rd
(X)
None
1
LD
Rd, X+
Load Indirect and Post-Increment
Rd
X
(X)
X + 1
None
1
LD
Rd, -X
Load Indirect and Pre-Decrement
X
X - 1,
Rd
(X)
X - 1
(X)
None
2
LD
Rd, Y
Load Indirect
Rd
(Y)
(Y)
None
1
LD
Rd, Y+
Load Indirect and Post-Increment
Rd
Y
(Y)
Y + 1
None
1
LD
Rd, -Y
Load Indirect and Pre-Decrement
Y
Rd
Y - 1
(Y)
None
2
LDD
Rd, Y+q
Load Indirect with Displacement
Rd
(Y + q)
None
2
LD
Rd, Z
Load Indirect
Rd
(Z)
None
1
LD
Rd, Z+
Load Indirect and Post-Increment
Rd
Z
(Z),
Z+1
None
1
LD
Rd, -Z
Load Indirect and Pre-Decrement
Z
Rd
Z - 1,
(Z)
None
2
LDD
Rd, Z+q
Load Indirect with Displacement
Rd
(Z + q)
None
2
STS
k, Rr
Store Direct to Data Space
(k)
Rd
None
2
ST
X, Rr
Store Indirect
(X)
Rr
None
1
ST
X+, Rr
Store Indirect and Post-Increment
(X)
X
Rr,
X + 1
None
1
ST
-X, Rr
Store Indirect and Pre-Decrement
X
(X)
X - 1,
Rr
None
2
ST
Y, Rr
Store Indirect
(Y)
Rr
None
1
ST
Y+, Rr
Store Indirect and Post-Increment
(Y)
Y
Rr,
Y + 1
None
1
ST
-Y, Rr
Store Indirect and Pre-Decrement
Y
(Y)
Y - 1,
Rr
None
2
STD
Y+q, Rr
Store Indirect with Displacement
(Y + q)
Rr
None
2
ST
Z, Rr
Store Indirect
(Z)
Rr
None
1
ST
Z+, Rr
Store Indirect and Post-Increment
(Z)
Z
Rr
Z + 1
None
1
ST
-Z, Rr
Store Indirect and Pre-Decrement
Z
Z - 1
None
2
STD
Z+q,Rr
Store Indirect with Displacement
(Z + q)
Rr
None
2
LPM
Load Program Memory
R0
(Z)
None
3
LPM
Rd, Z
Load Program Memory
Rd
(Z)
None
3
LPM
Rd, Z+
Load Program Memory and Post-Increment
Rd
Z
(Z),
Z + 1
None
3
ELPM
Extended Load Program Memory
R0
(RAMPZ:Z)
None
3
ELPM
Rd, Z
Extended Load Program Memory
Rd
(RAMPZ:Z)
None
3
ELPM
Rd, Z+
Extended Load Program Memory and Post-
Increment
Rd
Z
(RAMPZ:Z),
Z + 1
None
3
SPM
Store Program Memory
(RAMPZ:Z)
R1:R0
None
-
SPM
Z+
Store Program Memory and Post-Increment
by 2
(RAMPZ:Z)
Z
R1:R0,
Z + 2
None
-
Mnemonics
Operands
Description
Operation
Flags
#Clocks
相關(guān)PDF資料
PDF描述
IS61LF51218D-8.5TQ 512K X 18 CACHE SRAM, 8.5 ns, PQFP100
IS61LPD25636A-200B2 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200B2I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200B3 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD25636A-200B3I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S81600A-7TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-7TLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600AL-7TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S81600B-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600B-6TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM