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參數(shù)資料
| 型號(hào)： | IRS2336DJTRPBF |
| 廠商： | International Rectifier |
| 英文描述： | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| 中文描述： | 3相高壓柵極驅(qū)動(dòng)器集成電路 |
| 文件頁數(shù)： | 24/45頁 |
| 文件大?。?/td> | 952K |
| 代理商： | IRS2336DJTRPBF |
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IRS2336xD Family
www.irf.com
2007 International Rectifier
24
Fault Reporting and Programmable Fault Clear Timer
The IRS2336xD family provides an integrated fault reporting output and an adjustable fault clear timer. There are
two situations that would cause the HVIC to report a fault via the FAULT pin. The first is an undervoltage condition
of V
CC
and the second is if the ITRIP pin recognizes a fault. Once the fault condition occurs, the FAULT pin is
internally pulled to V
SS
and the fault clear timer is activated. The fault output stays in the low state until the fault
condition has been removed and the fault clear timer expires; once the fault clear timer expires, the voltage on the
FAULT pin will return to V
CC
.
The length of the fault clear time period (t
FLTCLR
) is determined by exponential charging characteristics of the
capacitor where the time constant is set by R
RCIN
and C
RCIN
. In Figure 12 where we see that a fault condition has
occurred (UVLO or ITRIP), RCIN and FAULT are pulled to V
SS
, and once the fault has been removed, the fault clear
timer begins. Figure 13 shows that R
RCIN
is connected between the V
CC
and the RCIN pin, while C
RCIN
is placed
between the RCIN and V
SS
pins.
Figure 12: RCIN and FAULT pin waveforms
Figure 13: Programming the fault clear timer
The design guidelines for this network are shown in Table 3.
≤
1 nF
C
RCIN
Ceramic
0.5 M
to 2 M
R
RCIN
>> R
ON,RCIN
Table 3: Design guidelines
The length of the fault clear time period can be determined by using the formula below.
v
C
(t) = V
f
(1-e
-t/RC
)
t
FLTCLR
= -(R
RCIN
C
RCIN
)ln(1-V
RCIN,TH
/V
CC
)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRS2336DMPBF | 功能描述:IC DRIVER BRIDGE 3-PHASE 48-MLPQ RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| IRS2336DMTRPBF | 功能描述:功率驅(qū)動(dòng)器IC 600V 3Phs Drvr IC w/Intgr BSF & Prot RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2336DPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS2336DSPBF | 功能描述:功率驅(qū)動(dòng)器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2336DSTRPBF | 功能描述:功率驅(qū)動(dòng)器IC 600V 3Phs Drvr IC w/Intgr BSF & Prot RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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