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參數資料
| 型號： | IRS2336DJTRPBF |
| 廠商： | International Rectifier |
| 英文描述： | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| 中文描述： | 3相高壓柵極驅動器集成電路 |
| 文件頁數： | 18/45頁 |
| 文件大?。?/td> | 952K |
| 代理商： | IRS2336DJTRPBF |
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IRS2336xD Family
www.irf.com
2007 International Rectifier
18
Application Information and Additional Details
Information regarding the following topics are included as subsections within this section of the datasheet.
IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Deadtime
Matched Propagation Delays
Input Logic Compatibility
Undervoltage Lockout Protection
Shoot-Through Protection
Enable Input
Fault Reporting and Programmable Fault Clear Timer
Over-Current Protection
Over-Temperature Shutdown Protection
Truth Table: Undervoltage lockout, ITRIP, and ENABLE
Advanced Input Filter
Short-Pulse / Noise Rejection
Integrated Bootstrap Functionality
Bootstrap Power Supply Design
Separate Logic and Power Grounds
Tolerant to Negative V
S
Transients
PCB Layout Tips
Additional Documentation
IGBT/MOSFET Gate Drive
The IRS2336xD HVICs are designed to drive up to six MOSFET or IGBT power devices. Figures 1 and 2 illustrate
several parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to
drive the gate of the power switch, is defined as I
O
. The voltage that drives the gate of the external power switch is
defined as V
HO
for the high-side power switch and V
LO
for the low-side power switch; this parameter is sometimes
generically called V
OUT
and in this case does not differentiate between the high-side or low-side output voltage.
V
S
(or COM)
HO
(or LO)
V
B
(or V
CC
)
I
O+
V
HO
(or V
LO
)
+
-
V
S
(or COM)
HO
(or LO)
V
B
(or V
CC
)
I
O-
Figure 1: HVIC sourcing current
Figure 2: HVIC sinking current
相關PDF資料 |
PDF描述 |
|---|---|
| IRS23364D | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364DJPBF | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364DJTRPBF | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364DPBF | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS23364DSPBF | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRS2336DMPBF | 功能描述:IC DRIVER BRIDGE 3-PHASE 48-MLPQ RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| IRS2336DMTRPBF | 功能描述:功率驅動器IC 600V 3Phs Drvr IC w/Intgr BSF & Prot RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2336DPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS2336DSPBF | 功能描述:功率驅動器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2336DSTRPBF | 功能描述:功率驅動器IC 600V 3Phs Drvr IC w/Intgr BSF & Prot RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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