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參數(shù)資料
| 型號(hào)： | IRS2118PbF |
| 廠商： | International Rectifier |
| 英文描述： | Asynchronous SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status:   Remarks:   |
| 中文描述： | 單信道驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 3/19頁(yè) |
| 文件大?。?/td> | 371K |
| 代理商： | IRS2118PBF |
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IRS2117/IRS2118(S)PbF
www.irf.com
3
Symbol
t
on
t
off
t
r
t
f
Definition
Min.
—
Typ. Max. Units Test Conditions
125
200
Turn-on propagation delay
V
S
= 0 V
V
S
= 600 V
Turn-off propagation delay
—
105
180
Turn-on rise time
—
75
130
Turn-off fall time
—
35
65
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, C
L
= 1000 pF and T
A
= 25 °C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Fig. 3.
ns
Symbol
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
Definition
Min.
Typ. Max. Units
Test Conditions
—
—
Input voltage - logic “1” (IRS2117) logic “0” (IRS2118) 9.5
Input voltage - logic “0” (IRS2117) logic “1” (IRS2118)
—
—
6.0
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
—
0.05
0.2
—
0.02
0.1
—
—
50
V
B
= V
S
= 600 V
Quiescent V
BS
supply current
Quiescent V
CC
Supply Current
Logic “1” input bias current (IRS2117)
(IRS2118)
—
50
240
—
70
340
I
IN+
V
IN
= V
CC
I
IN-
Logic “0” input bias current (IRS2117)
(IRS2118)
V
IN
= V
CC
V
BSUV+
V
BSUV-
V
CCUV+
V
CCUV-
V
BS
supply undervoltage positive going threshold
V
BS
supply undervoltage negative going threshold
V
CC
supply undervoltage positive going threshold
V
CC
supply undervoltage negative going threshold
7.6
8.6
9.6
7.2
8.2
9.2
7.6
8.6
9.6
7.2
8.2
9.2
V
O
= 0V
V
IN
= Logic “1”
PW
≤
10 μs
V
O
= 15V
V
IN
= Logic “0”
PW
≤
10 μs
I
O+
Output high short circuit pulsed current
200
290
—
I
O-
Output low short circuit pulsed current
420
600
—
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V and T
A
= 25 °C unless otherwise specified. The V
IN
, V
TH,
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
mA
V
V
— 20
40
μA
— —
5.0
I
O
= 2 mA
V
IN
= 0 V
V
IN
= 0 V or V
CC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRS2118PBF | 制造商:International Rectifier 功能描述:MOSFET Driver IC |
| IRS2118SPbF | 功能描述:功率驅(qū)動(dòng)器IC 1 NONINVERTING INPUT VTG THRESHOLD RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2118SPBF | 制造商:International Rectifier 功能描述:MOSFET Driver IC |
| IRS2118STRPBF | 功能描述:功率驅(qū)動(dòng)器IC Sngl Hi Sd Drvr NonInvrt Inpt RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2123SPBF | 功能描述:功率驅(qū)動(dòng)器IC 3-Phase Bridge DRVR 600V 500mA 140ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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