參數(shù)資料
型號(hào): IRS2118PbF
廠(chǎng)商: International Rectifier
英文描述: Asynchronous SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status:   Remarks:  
中文描述: 單信道驅(qū)動(dòng)器
文件頁(yè)數(shù): 2/19頁(yè)
文件大?。?/td> 371K
代理商: IRS2118PBF
www.irf.com
2
IRS2117/IRS2118(S)PbF
Symbol
Definition
Min.
Max.
Units
V
B
V
S
V
HO
V
CC
V
IN
dV
s
/dt
High-side floating supply voltage
-0.3
625
High-side floating supply offset voltage
V
B
- 25
V
S
- 0.3
-0.3
V
B
+ 0.3
V
B
+ 0.3
25
High-side floating output voltage
Logic supply voltage
Logic input voltage
-0.3
V
CC
+ 0.3
50
Allowable offset supply voltage transient (Fig. 2)
V/ns
P
D
Package power dissipation @ T
A
+25 °C
(8 lead PDIP)
1.0
(8 lead SOIC)
0.625
Rth
JA
Thermal resistance, junction to ambient
(8 lead PDIP)
125
(8 lead SOIC)
200
T
J
T
S
T
L
Junction temperature
150
Storage temperature
-55
150
Lead temperature (soldering, 10 seconds)
300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figs. 5 through 8.
Symbol
Definition
Min.
Max.
Units
V
B
V
S
V
HO
V
CC
V
IN
T
A
High-side floating supply absolute voltage
V
S
+ 10
Note 1
V
S
+ 20
600
High-side floating supply offset voltage
High-side floating output voltage
V
S
10
V
B
20
Logic supply voltage
Logic input voltage
0
V
CC
125
Ambient temperature
-40
°C
Note 1: Logic operational for V
S
of -5 V to +600 V. Logic state held for V
S
of -5 V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15 V differential.
W
°C/W
V
°C
V
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IRS2118SPbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:  
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IRS21271SPbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status:   Remarks:  
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