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參數(shù)資料
| 型號(hào)： | IRLU4343 |
| 廠商： | International Rectifier |
| 英文描述： | DIGITAL AUDIO MOSFET |
| 中文描述： | 數(shù)字音頻MOSFET的 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 255K |
| 代理商： | IRLU4343 |
www.irf.com
1
3/26/04
Notes
through are on page 10
IRLR4343
IRLU4343
IRLU4343-701
I-Pak Leadform 701
IRLU4343-701
Refer to page 10 for package outline
D-Pak
IRLR4343
I-Pak
IRLU4343
Features
Advanced Process Technology
Key Parameters Optimized for Class-D Audio
Amplifier Applications
Low R
DSON
for Improved Efficiency
Low Q
g
and Q
sw
for Better THD and Improved
Efficiency
Low Q
rr
for Better THD and Lower EMI
175°C Operating Junction Temperature for
Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
Multiple Package Options
Description
This Digital Audio HEXFET
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
S
D
G
V
DS
R
DS(ON)
typ. @ V
GS
= 10V
R
DS(ON)
typ. @ V
GS
= 4.5V
Q
g
typ.
T
J
max
55
42
57
28
175
V
m
m
nC
°C
Key Parameters
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Clamping Pressure
A
W
W/°C
°C
T
J
T
STG
N
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mounted)
Junction-to-Ambient (free air)
°C/W
-40 to + 175
–––
79
39
0.53
Max.
55
19
80
±20
26
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLU4343-701 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DIGITAL AUDIO MOSFET |
| IRLU4343-701PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DIGITAL AUDIO MOSFET |
| IRLU4343PBF | 功能描述:MOSFET N-CH 55V 26A I-PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRLU7807Z | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLU7807ZCPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
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