參數(shù)資料
型號(hào): IRLRU3103PBF
廠商: International Rectifier
英文描述: HEXFET㈢ Power MOSFET
中文描述: ㈢的HEXFET功率MOSFET
文件頁(yè)數(shù): 4/11頁(yè)
文件大?。?/td> 295K
代理商: IRLRU3103PBF
IRLR/U3103PbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
400
800
1200
1600
2000
2400
2800
3200
1
10
100
C
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
oss
C
rss
0
3
6
9
12
15
0
10
20
30
40
50
60
70
Q , Total Gate Charge (nC)
V
G
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 24V
V = 15V
I = 34A
10
100
1000
0.4
0.8
V , Source-to-Drain Voltage (V)
1.2
1.6
2.0
2.4
2.8
T = 25°C
V = 0V
I
S
A
T = 175°C
1
10
100
1000
1
10
100
V , Drain-to-Source Voltage (V)
I
D
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10μs
100μs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
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