參數(shù)資料
型號(hào): IRLR8721PBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 5/11頁
文件大?。?/td> 375K
代理商: IRLR8721PBF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
70
ID
Limited By Package
-75 -50 -25 0
25 50 75 100125150175200
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
VG
ID = 25μA
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
0.20
0.10
0.05
D = 0.50
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τ
i (sec)
0.3501 0.000072
1.1877 0.001239
0.7635 0.010527
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci i
/
Ri
Ci=
i
/
Ri
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IRLU8721PbF Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status:   Remarks:  
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