參數(shù)資料
型號: IRLI620
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 200V的電壓,的Rds(on)\u003d 0.80ohm,身份證\u003d 4.0a上)
文件頁數(shù): 5/8頁
文件大?。?/td> 339K
代理商: IRLI620
IRLI620G
Fig 10a.
Switching Time Test Circuit
V
DS
5.0 V
Pulse Width
≤ 1
μs
Duty Factor
≤ 0.1 %
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.01
0.00001
0.1
1
10
0.0001
0.001
t , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
t
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
T
A
P
t
2
1
t
DM
Notes:
1. Duty factor D = t1
2
2. Peak T = P x Z + TC
0.0
1.0
2.0
3.0
4.0
25
50
T , Case Temperature (°C)
75
100
125
150
I
D
A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLI620A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET
IRLI620ATU 功能描述:MOSFET 200V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLI620G 功能描述:MOSFET N-Chan 200V 4.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLI620GPBF 功能描述:MOSFET N-Chan 200V 4.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLI630 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET