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| 型號(hào)： | IRLI640 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）\u003d 0.18ohm，身份證\u003d 9.9A） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 332K |
| 代理商： | IRLI640 |
Parameter
Min.
––––
––––
Typ.
––––
––––
Max.
3.1
65
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
IRLI640G
HEXFET
Power MOSFET
PD - 9.1237
Revision 0
V
DSS
= 200V
R
DS(on)
= 0.18
I
D
= 9.9A
Absolute Maximum Ratings
Thermal Resistance
Parameter
Max.
9.9
6.3
40
40
0.32
±10
290
9.9
4.0
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
R
DS(ON)
Specified at V
GS
= 4V & 5V
Fast Switching
Ease of paralleling
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Description
°C/W
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