參數(shù)資料
型號(hào): IRL2203S
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 30V的,的Rds(on)\u003d 0.007ohm,身份證\u003d 100號(hào)A)
文件頁數(shù): 2/9頁
文件大?。?/td> 173K
代理商: IRL2203S
IRL2203S
Parameter
Min. Typ. Max. Units
30
–––
–––
0.035 –––
–––
––– 0.007
–––
–––
1.0
–––
47
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
–––
210
–––
29
–––
54
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 60A
V
GS
= 4.5V, I
D
= 50A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 60A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 60A
V
DS
= 24V
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 15V
I
D
= 60A
R
G
= 1.8
,
V
GS
= 4.5V
R
D
= 0.25
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
0.01
2.5
–––
25
250
100
-100
110
31
57
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3500 –––
1400 –––
690
pF
–––
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
7.5
nH
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 15V, starting T
J
= 25°C, L = 220μH
R
G
= 25
, I
AS
= 60A. (See Figure 12)
Notes:
Pulse width
300μs; duty cycle
2%.
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
I
SD
60A, di/dt
140A/μs, V
DD
V
(BR)DSS
,
T
J
175°C
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 60A, V
GS
= 0V
T
J
= 25°C, I
F
= 60A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
–––
–––
–––
–––
94
280
1.3
140
410
V
ns
nC
Source-Drain Ratings and Characteristics
S
D
G
100
400
A
Uses IRL2203N data and test conditions.
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