參數(shù)資料
型號(hào)： IRL2203NL
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 30V的，的Rds（on）\u003d 7.0mohm，身份證\u003d 116A）
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 221K
代理商： IRL2203NL
IRL2203N
HEXFET
Power MOSFET
3/16/01
Parameter
Typ.
–––
0.50
–––
Max.
0.85
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
1
V
DSS
= 30V
R
DS(on)
= 7.0m
I
D
= 116A
S
D
G
TO-220AB
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
PD - 91366
Absolute Maximum Ratings
Parameter
Max.
116
82
400
180
1.2
± 16
60
18
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
相關(guān)PDF資料
PDF描述
IRL2203NS Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A)
IRL2703 HEXFET Power MOSFET
IRL3803L Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A)
IRL3803S Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A)
IRL3803 Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRL2203NLPBF 功能描述:MOSFET MOSFT 30V 116A 7mOhm 40nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRL2203NPBF 功能描述:MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRL2203NS 功能描述:MOSFET N-CH 30V 116A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRL2203NS.IRL2203NL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:(161.16 k)
IRL2203NSHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 116A 3-Pin(2+Tab) D2PAK
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