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參數(shù)資料
| 型號： | IRHY7130CM |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 97K |
| 代理商： | IRHY7130CM |
IRHY7130CM, IRHY8130CM, JANSR-, JANSH-, 2N7380 Devices
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
80
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
Test Conditions
V
DSS
80
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
160 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
100
—
—
—
800
—
—
—
0.5
100
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Range V
DS
Bias V
GS
Bias
(μm) (V) (V)
~41 100 -5
Parameter
Typical
Units
Ion
V
DS
100
V
Ni
Radiation Performance of Rad Hard HEXFETs
Table 1. Low Dose Rate
Parameter
IRHY7130CM IRHY8130CM
100K Rads (Si) 1000K Rads (Si)
Units
Min
Max
Min
100
—
100
2.0
4.0
1.25
—
100
—
—
-100
—
—
25
—
—
0.18
—
Test Conditions
Max
—
4.5
100
-100
25
0.24
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= 12V, I
D
= 9.1A
nA
μA
V
SD
—
1.8
—
1.8
V
TC = 25°C, IS = 14.4A,V
GS
= 0V
Radiation -
Characteristics
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier uses
two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
V
DSS
bias condition equal to 80% of the device rated
voltage per note 7. Pre- and post-radiation limits of
the devices irradiated to 1 x 10
5
Rads (Si) are identi-
cal and are presented in Table 1, column 1,
IRHY7130CM. The values in Table 1 will be met for
either of the two low dose rate test circuits that are
used. Both pre- and post-radiation performance are
tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison. It should be noted that at a radiation level of
1 x 10
5
Rads (Si) no changes in limits are specified in
DC parameters.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single Event
Effects characterization is shown in Table 3.
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