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參數(shù)資料
| 型號： | IRHY7130CM |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 97K |
| 代理商： | IRHY7130CM |
IRHY7130CM, IRHY8130CM, JANSR-, JANSH-, 2N7380 Devices
Pre-Radiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
—
Typ
—
0.11
Max Units
—
—
Test Conditions
VGS = 0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.0
2.5
—
—
—
—
—
—
—
—
0.18
0.20
4.0
—
25
250
VGS = 12V, ID = 9.1A
VGS = 12V, ID = 14.4A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 14.4A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 14.4A
VDS = Max Rating x 0.5
VGS(th)
gfs
IDSS
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
100
-100
50
10
20
35
75
70
60
—
nC
VDD = 50V, ID = 14.4A,
RG = 7.5
LS
Internal Source Inductance
—
15
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
960
340
85
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
Measured fromdrain lead,
6mm(0.25 in) frompackage
to center of die.
Measured fromsource lead,
to source bonding pad.
Modified MOSFET symbol show-
μ
A
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ Max Units
—
—
—
—
Test Conditions
14.4
58
Modified MOSFET symbol showing the integral
reverse p-n junction rectifier.
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.8
275
2.5
V
ns
μ
C
T
j
= 25°C, IS = 14.4A, VGS = 0V
Tj = 25°C, IF = 14.4A, di/dt
≤
100A/
μ
s
VDD
≤
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
—
1.67
K/W
RthJA
Junction-to-Ambient
—
—
80
Typical socket mount
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