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參數(shù)資料
| 型號： | IRHNJ597130 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 0.5） |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 122K |
| 代理商： | IRHNJ597130 |
www.irf.com
7
Pre-Irradiation
IRHNJ597130
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
25
50
75
100
125
150
0
40
80
120
160
200
Starting T , Junction Temperature( C)
E
ID
-5.6A
-8.0A
-12.5A
TOP
BOTTOM
tp
V
(BR)DSS
I
AS
Q
G
Q
GS
Q
GD
V
G
Charge
-12 V
D.U.T.
V
DS
+
I
D
I
G
-3mA
V
GS
.3
μ
F
50K
.2
μ
F
-12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
-
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
V
V
DD
DRIVER
A
15V
-20V
+
-
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