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參數(shù)資料
| 型號(hào)： | IRHNJ597130 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 0.5） |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 122K |
| 代理商： | IRHNJ597130 |
www.irf.com
5
Pre-Irradiation
IRHNJ597130
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
400
800
1200
1600
2000
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-12.5A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
0.1
1
10
100
0.0
1.0
2.0
3.0
4.0
5.0
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 150 C
°
T = 25 C
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
-D
Tc = 25
°
C
Tj = 150
°
C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
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