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參數(shù)資料
| 型號(hào)： | IRHQ3110 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝（持有LCC - 28） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 128K |
| 代理商： | IRHQ3110 |
Absolute Maximum Ratings (Per Die)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
85
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
3.0
1.9
12
12
0.1
±20
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
3.0
1.2
3.0
-55 to 150
300 (for 5s)
0.89 (Typical)
g
Pre-Irradiation
International Rectifier’s RAD-Hard
TM
HEXFET
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices re-
tain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of parallel-
ing and temperature stability of electrical parameters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
12/27/00
www.irf.com
1
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
For footnotes refer to the last page
LCC-28
Product Summary
Part Number Radiation Level R
DS(on)
IRHQ7110 100K Rads (Si) 0.6
IRHQ3110 300K Rads (Si) 0.6
IRHQ4110 600K Rads (Si) 0.6
IRHQ8110 1000K Rads (Si) 0.75
I
D
3.0A
3.0A
3.0A
3.0A
IRHQ7110
100V, QUAD N-CHANNEL
RAD-Hard
MOSFET TECHNOLOGY
HEXFET
PD - 93785A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHQ4110 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| IRHQ7110 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| IRHQ8110 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| IRHSNA53064 | RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
| IRHSNA54064 | RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHQ3214 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| IRHQ4110 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| IRHQ4214 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| IRHQ53110 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ54110 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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