參數(shù)資料
型號: IRGBC20M
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
文件頁數(shù): 6/6頁
文件大?。?/td> 97K
代理商: IRGBC20M
C-306
IRGBC20M
Fig. 12
- Turn-Off SOA
Fig. 11 -
Typical Switching Losses vs.
Collector-to-Emitter Current
0.0
1.0
2.0
3.0
4.0
0
4
8
12
16
20
T
I , Collector-to-Emitter Current (A)
R = 50
T = 150°C
V = 480V
V = 15V
A
1
10
100
1
10
100
1000
C
V , Collector-to-Emitter Voltage (V)
I
SAFE OPERATING AREA
V = 20V
T = 125°C
A
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 1
- JEDEC Outline TO-220AB
Section D - page D-12
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