參數(shù)資料
型號: IRGBC20M
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
文件頁數(shù): 3/6頁
文件大小: 97K
代理商: IRGBC20M
C-303
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
IRGBC20M
0
4
8
12
16
20
0.1
1
10
100
f, Frequency (kHz)
L
A
60% of rated
voltage
Ideal diodes
Square wave:
Triangular wave:
Clamp voltage:
80% of rated
For both:
Duty cycle: 5 0%
T = 125°C
T = 90°C
Gate drive as specified
Power Dissipation = 14W
1
10
100
1
10
C
I
V , Collector-to-Emitter Voltage (V)
T = 150°C
T = 25°C
V = 15V
20μs PULSE WIDTH
A
1
10
100
5
10
15
20
C
I
V , Gate-to-Emitter Voltage (V)
T = 25°C
T = 150°C
V = 100V
5μs PULSE WIDTH
A
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