參數(shù)資料
型號(hào): IRGBC20M
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 97K
代理商: IRGBC20M
C-304
Fig. 5
- Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4
- Maximum Collector Current vs.
Case Temperature
IRGBC20M
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
2
4
6
8
10
12
14
25
50
T , Case Temperature (°C)
75
100
125
150
M
V = 15V
A
0.0
1.0
2.0
3.0
4.0
5.0
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100 120 140 160
V
V = 15V
80μs PULSE WIDTH
I = 16A
I = 8.0A
I = 4.0A
A
0.01
0.00001
0.1
1
10
0.0001
0.001
t , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
t
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
T
P
t
2
1
t
D M
Notes:
1. Duty factor D = t1
2
2. Peak T = P x Z + T
相關(guān)PDF資料
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