參數(shù)資料
型號(hào): IRG4PC60F-PPBF
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR (Fast Speed IGBT)
中文描述: 絕緣柵雙極晶體管(IGBT的速度快)
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 242K
代理商: IRG4PC60F-PPBF
IRG4PC60F-PPbF
www.irf.com
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VCE , Collector-to-Emitter Voltage (V)
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1000
IC
TJ = 150°C
TJ = 25°C
VGE = 15V
20μs PULSE WIDTH
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VGE, Gate-to-Emitter Voltage (V)
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IC
TJ = 150°C
TJ = 25°C
VCC = 10V
5μs PULSE WIDTH
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10
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f , Frequency ( kHz )
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L
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 73W for Heatsink Mount
Power Dissipation = 3.5W for typical
PCB socket Mount
60% of rated
voltage
Ideal diodes
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