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參數(shù)資料
| 型號： | IRFZ48NL |
| 廠商： | International Rectifier |
| 英文描述： | 55V,64A,N-Channel HEXFET Power MOSFET(55V,64A,N溝道 HEXFET功率MOS場效應(yīng)管) |
| 中文描述： | 55V的，64A條，N溝道HEXFET功率MOSFET（55V的，64A條，?溝道的HEXFET功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 158K |
| 代理商： | IRFZ48NL |
IRFZ48NS/L
Parameter
Min. Typ. Max. Units
55
–––
–––
0.052 –––
–––
––– 0.016
2.0
–––
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
–––
78
–––
32
–––
48
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 32A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 32A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 32A
V
DS
= 44V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 44V
I
D
= 32A
R
G
= 5.1
R
D
= 0.85
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
4.0
–––
25
250
100
-100
89
20
39
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1900 –––
620
270
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
V
DD
= 25V, starting T
J
= 25°C, L = 530μH
R
G
= 25
, I
AS
= 32A. (See Figure 12)
I
SD
≤
32A, di/dt
≤
250A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 32A, V
GS
= 0V
T
J
= 25°C, I
F
= 32A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
–––
–––
–––
–––
94
360
1.3
140
540
V
ns
nC
Source-Drain Ratings and Characteristics
S
D
G
64
210
A
Uses IRFZ48N data and test conditions
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