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參數(shù)資料
| 型號(hào)： | IRFZ44R |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 60V的，的Rds（on）\u003d 0.028ohm，身份證\u003d 50 *甲） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | IRFZ44R |
IRFZ44R
HEXFET
Power MOSFET
8/24/00
Absolute Maximum Ratings
Parameter
Typ.
–––
0.50
–––
Max.
1.0
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
1
V
DSS
= 60V
R
DS(on)
= 0.028
I
D
= 50*A
S
D
G
TO-220AB
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175
°
C Operating Temperature
Fast Switching
Fully Avalanche Rated
Drop in Replacement of the IRFZ44
for Linear/Audio Applications
Description
Parameter
Max.
50*
36
200
150
1.0
±20
100
4.5
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
A
W
W/
°
C
V
mJ
V/ns
V
GS
E
AS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1 N
m)
°
C
PD - 93956
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| IRFZ44R_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRFZ44RPBF | 功能描述:MOSFET N-Chan 60V 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ44RSTRR | 功能描述:MOSFET N-CH 60V 50A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFZ44S | 功能描述:MOSFET N-Chan 60V 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ44S_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
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