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參數資料
| 型號： | IRFV260 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*) |
| 中文描述： | 晶體管N溝道（減振鋼板基本\u003d 200V的電壓，的Rds（on）\u003d 0.060ohm，身份證\u003d 45A條*） |
| 文件頁數： | 3/4頁 |
| 文件大小： | 175K |
| 代理商： | IRFV260 |
Thermal Resistance
Parameter
Min. Typ. Max. Units Test Conditions
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
—
—
—
—
—
0.21
0.42
30
—
K/W
typical socket mount
mounting surface flat, smooth
Source-Drain Diode Ratings and Characteristics
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
Test Conditions
IS
ISM
45*
180
Modified MOSFET symbol showing the
A
integral reverse p-n junction rectifier.
VSD
trr
QRR Reverse Recovery Charge
Diode Forward Voltage
Reverse Recovery Time
—
—
—
—
—
—
1.8
420
4.9
V
ns
μ
C
T
j
= 25°C, IS = 45A, VGS = 0V
Tj = 25°C, IF = 45A, di/dt
≤
100A/
μ
s
VDD
≤
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
IRFV260 Device
Repetitive Rating; Pulse width limited by
maximum junction temperature.
@ VDD = 50V Starting TJ = 25°C,
EAS = [0.5 * L * (I
Peak IL = 45A, VGS = 10V, 25
≤
RG
≤
200
2
) * [BVDSS/(BVDSS-VDD)]
ISD
≤
45A, di/dt
≤
130 A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG = 2.35
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
K/W = °C/W
W/K = W/°C
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相關代理商/技術參數 |
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|---|---|
| IRFV360 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 25A 3PIN TO-258AA - Bulk |
| IRFV360D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | TO-258VAR |
| IRFV360U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | TO-258VAR |
| IRFV460 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:500V Single N-Channel Hi-Rel MOSFET in a TO-258AA package |
| IRFV460D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | TO-258VAR |
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