參數(shù)資料
型號: IRFV260
廠商: International Rectifier
英文描述: TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
中文描述: 晶體管N溝道(減振鋼板基本\u003d 200V的電壓,的Rds(on)\u003d 0.060ohm,身份證\u003d 45A條*)
文件頁數(shù): 2/4頁
文件大?。?/td> 175K
代理商: IRFV260
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJTemp. Coefficient of Breakdown Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min.
200
Typ. Max. Units
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
VGS = 10V, ID =29A
VGS = 10V, ID = 45A
VDS = VGS, ID = 250μA
VDS
15V, IDS = 29A
VDS=0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 45A
VDS = Max. Rating x 0.5
BVDSS
V
2.0
22
0.24
V/°C
0.060
0.068
4.0
25
250
V
S (
)
μA
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
8.7
100
-100
230
40
110
29
120
110
92
nA
nC
VDD = 100V, ID =45A,
RG = 2.35
,
VGS =10V
ns
LS
Internal Source Inductance
8.7
nH
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
5100
1100
280
VGS = 0V, VDS = 25V
f = 1.0 MHz
pF
IRFV260 Device
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
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