參數(shù)資料
型號: IRFV260
廠商: International Rectifier
英文描述: TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
中文描述: 晶體管N溝道(減振鋼板基本\u003d 200V的電壓,的Rds(on)\u003d 0.060ohm,身份證\u003d 45A條*)
文件頁數(shù): 1/4頁
文件大?。?/td> 175K
代理商: IRFV260
Absolute Maximum Ratings
Parameter
Continuous Drain Current
IRFV260
45*
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
29
180
300
2.4
±20
700
45
30
4.3
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
o
C
300 (0.063 in. (1.6mm) from case for 10 sec.)
10.9 (typical)
g
N-CHANNEL
Provisional Data Sheet No. PD-9.2002
200 Volt, 0.060
, HEXFET
A
IRFV260
HEXFET
TRANSISTOR
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry design achieves very
low on-state resistance combined with high trans-
conductance.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits and virtually
any application where high reliability is required.
The HEXFET transistor’s totally isolated package
eliminates the need for additional isolating material
between the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
Product Summary
Part Number
IRFV260
BV
DSS
200V
R
DS(on)
0.060
I
D
45A*
Features:
n
Hermetically Sealed
n
Electrically Isolated
n
Simple Drive Requirements
n
Ease of Paralleling
n
Ceramic Eyelets
* ID current limited by pin diameter
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