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參數(shù)資料
| 型號： | IRFR9110 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P溝道功率MOS場效應管) |
| 中文描述： | 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 62K |
| 代理商： | IRFR9110 |
4-81
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
C
ISS
C
OSS
C
RSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
400
300
200
100
0
0
-5
-10
-15
-20
-25
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
-100
-50
-25
0
-10.0
-5.0
-2.5
0.0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
μ
s)
V
DD
= BV
DSS
R
L
= 32.2
I
G(REF)
= -1.45mA
V
GS
= -10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
D
,
V
G
,
-75
V
DD
= BV
DSS
-7.5
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
t
ON
10%
0
IRFR9110, IRFU9110
相關PDF資料 |
PDF描述 |
|---|---|
| IRFU9110 | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P溝道功率MOS場效應管) |
| IRFR9220PBF | HEXFET㈢ Power MOSFET |
| IRFU9220PBF | HEXFET㈢ Power MOSFET |
| IRFR9220 | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
| IRFU9220 | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR91109A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR9110PBF | 功能描述:MOSFET P-Chan 100V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR9110TF | 制造商:International Rectifier 功能描述: |
| IRFR9110TM | 制造商:Samsung Semiconductor 功能描述: |
| IRFR9110TR | 功能描述:MOSFET P-Chan 100V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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