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參數資料
| 型號： | IRFR9110 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P溝道功率MOS場效應管) |
| 中文描述： | 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數： | 3/7頁 |
| 文件大?。?/td> | 62K |
| 代理商： | IRFR9110 |
4-79
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
P
T
C
, CASE TEMPERATURE (
o
C)
-1.5
-3.5
-0.5
0
25
50
75
100
125
150
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-2.0
-3.0
-2.5
-1.0
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.01
10
0.1
1
Z
θ
J
,
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
T
0.01
0.02
0.05
0.1
0.2
0.5
-20
-10
-1
-0.1-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
100
μ
s
10ms
100ms
DC
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS
MAX = -100V
T
C
= 25
o
C, T
J
= MAX RATED
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-10
-30
t, PULSE WIDTH (s)
I
D
,
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-1
T
C
= 25
o
C
V
GS
= -20V
V
GS
= -10V
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
150
-------125
T
C
–
=
IRFR9110, IRFU9110
相關PDF資料 |
PDF描述 |
|---|---|
| IRFU9110 | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P溝道功率MOS場效應管) |
| IRFR9220PBF | HEXFET㈢ Power MOSFET |
| IRFU9220PBF | HEXFET㈢ Power MOSFET |
| IRFR9220 | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
| IRFU9220 | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFR91109A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR9110PBF | 功能描述:MOSFET P-Chan 100V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR9110TF | 制造商:International Rectifier 功能描述: |
| IRFR9110TM | 制造商:Samsung Semiconductor 功能描述: |
| IRFR9110TR | 功能描述:MOSFET P-Chan 100V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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