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參數(shù)資料
| 型號(hào)： | IRFR9110 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P溝道功率MOS場效應(yīng)管) |
| 中文描述： | 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 62K |
| 代理商： | IRFR9110 |
4-80
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-10
-7.75
-1
0.01
0.1
1
10
E
AS
= 140mJ
CONDITIONS:
V
DD
= -25V, I
AS
= -3.1A,
L = 21mH, STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) In [(I
AS
* R) / (1.3 RATED BV
DSS
- V
DD
+1]
T
AV
, TIME IN AVALANCHE (ms)
I
A
,
0
0
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
-1
-2
-3
-4
-5
-6
I
D
,
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -20V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
0
-2
-4
-6
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
0
-55
o
C
150
o
C
25
o
C
-4
-6
-10
-8
-8
-10
-2
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
V
GS
= V
DS
, I
D
= -250
μ
A
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
180
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= -3.1A
O
T
J
, JUNCTION TEMPERATURE (
o
C)
N
T
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
V
GS
= V
DS
, ID = -250
μ
A
IRFR9110, IRFU9110
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| IRFU9110 | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P溝道功率MOS場效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR91109A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR9110PBF | 功能描述:MOSFET P-Chan 100V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR9110TF | 制造商:International Rectifier 功能描述: |
| IRFR9110TM | 制造商:Samsung Semiconductor 功能描述: |
| IRFR9110TR | 功能描述:MOSFET P-Chan 100V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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