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參數(shù)資料
| 型號(hào)： | IRFR110 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 60K |
| 代理商： | IRFR110 |
4-373
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
4.7
A
Pulse Source to Drain Current (Note 2)
I
SDM
-
-
17
A
Source to Drain Diode Voltage (Note 4)
V
SD
T
J
= 25
o
C, I
SD
= 4.7A, V
GS
= 0V (Figure 13)
-
-
2.5
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 5.6A, dI
SD
/dt = 100A/
μ
s
46
96
200
ns
Reverse Recovery Charge
Q
RR
T
J
= 25
o
C, I
SD
= 5.6A, dI
SD
/dt = 100A/
μ
s
0.17
0.38
0.83
μ
C
NOTES:
2. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
3. V
DD
= 25V, starting T
J
= 25
o
C, L = 1.3mH, R
G
= 25
, peak I
AS
= 4.7A.
4. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
G
D
S
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
175
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
150
1
2
3
4
5
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
1
0.01
10
0.1
1
10
-4
10
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
Z
θ
J
,
T
0.5
0.2
0.1
0.05
0.02
0.01
IRFR110, IRFU110
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR110_R4941 | 功能描述:MOSFET TO-252AA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IRFR110ATM | 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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