參數(shù)資料
型號: IRFU13N15D
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 150伏時,RDS(on)的最大值\u003d 0.18ohm,身份證\u003d 14A條)
文件頁數(shù): 1/10頁
文件大小: 128K
代理商: IRFU13N15D
www.irf.com
1
6/29/00
IRFR13N15D
IRFU13N15D
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
150V
R
DS(on)
max
0.18
I
D
14A
Parameter
Max.
14
9.8
56
86
0.57
± 30
3.8
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
through
are on page 10
D-Pak
IRFR13N15D
I-Pak
IRFU13N15D
PD - 93905A
l
High frequency DC-DC converters
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Applications
Typical SMPS Topologies
l
Telecom 48V input Active Clamp Forward Converter
相關PDF資料
PDF描述
IRFR13N15D Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A)
IRFU13N20D Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)
IRFR13N20 Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)
IRFR13N20D Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)
IRFU18N15DPBF SMPS MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
IRFU13N15DPBF 制造商:International Rectifier 功能描述:MOSFET N 150V 14A I-PAK
IRFU13N20D 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK
IRFU13N20DPBF 功能描述:MOSFET MOSFT 200V 14A 235mOhm 25nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU15N20D 制造商:IRF 制造商全稱:International Rectifier 功能描述:SMPS MOSFET
IRFU15N20DPBF 功能描述:MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube