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參數資料
| 型號： | IRFN3710 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A) |
| 中文描述： | 晶體管N溝道（BVdss \u003d 100V的，的Rds（on）\u003d 0.028ohm，身份證\u003d 45A條） |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 132K |
| 代理商： | IRFN3710 |
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJTemp. Coefficient of Breakdown Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min.
100
Typ. Max. Units
—
—
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
VGS = 12V, ID =28A
VGS = 12V, ID = 45A
VDS = VGS, ID = 250 mA
VDS > 15V, IDS = 28A
VDS=0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID =45 A
VDS = Max. Rating x 0.5
BVDSS
V
—
—
—
2.0
24
—
—
0.120
—
—
—
—
—
—
—
V/°C
0.028
0.032
4.0
—
25
250
V
S (
)
μA
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
14
59
58
48
8.7
100
-100
190
26
82
—
—
—
—
—
nA
nC
VDD = 50V, ID =45A,
RG = 4.3
ns
LS
Internal Source Inductance
—
8.7
—
nH
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
3000
640
330
—
—
—
VGS = 0V, VDS = 25V
f = 1.0 MHz
pF
IRFN3710 Device
Measured fromthe
drain lead, 6mm(0.25
in.) frompackage to
center of die.
Measured fromthe
source lead, 6mm
(0.25 in.) frompackage
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
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