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參數(shù)資料
| 型號： | IRFNG50 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=2.0ohm, Id=5.5A) |
| 中文描述： | 功率MOSFET N溝道（BVdss \u003d 1000V的的Rds（on）\u003d 2.0ohm，身份證\u003d 5.5A） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 213K |
| 代理商： | IRFNG50 |
Product Summary
Part Number
IRFNG50
BV
DSS
1000V
R
DS(on)
2.0
I
D
5.5A
Features:
I
Avalanche Energy Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
I
Surface Mount
I
Light-weight
N-CHANNEL
Provisional Data Sheet No. PD-9.1556
1000 Volt, 2.0
HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits.
The Surface Mount Device (SMD-1) package repre-
sents another step in the continual evolution of sur-
face mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has en-
gineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electrical performance.
IRFNG50
HEXFET
POWER MOSFET
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRFNG50
5.5
3.5
22
150
1.2
±20
860
5.5
15.0
1.0
-55 to 150
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (for 5 seconds)
2.6 (typical)
g
o
C
A
Next Data Sheet
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| IRFNJ130N | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N–CHANNEL POWER MOSFET |
| IRFNJ5305 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:P–CHANNEL POWER MOSFET |
| IRFNJ540 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
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