參數(shù)資料
型號: IRFN3710
廠商: International Rectifier
英文描述: TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A)
中文描述: 晶體管N溝道(BVdss \u003d 100V的,的Rds(on)\u003d 0.028ohm,身份證\u003d 45A條)
文件頁數(shù): 1/4頁
文件大?。?/td> 132K
代理商: IRFN3710
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRFN3710
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
45
28
180
125
1.0
±20
690
27
12.5
5.0
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
o
C
300 (for 5 sec.)
2.6 (typical)
g
N-CHANNEL
Provisional Data Sheet No. PD-9.1417
100 Volt, 0.028
, HEXFET
A
IRFN3710
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
Generation 5 HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design for which HEXFETs
are well known, provides the designer with an ex-
tremely efficient device for use in a wide variety of
applications.
The Surface Mount Device 1 (SMD-1) package rep-
resents anothther step in the continual evolution of
surface mount technology. Designed to be a close
replacement for the TO-3 package, the SMD-1 will
give designers the extra flexibility they need to in-
crease circuit board density. International Rectifier has
engineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electical performance.
Product Summary
Part Number
IRFN3710
BV
DSS
100V
R
DS(on)
0.028
I
D
45A
Features:
n
Surface Mount
n
Small Footprint
n
Alternative to TO-3 Package
n
Hermetically Sealed
n
Avalanche Energy Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Lightweight
Next Data Sheet
Index
Previous Datasheet
To Order
相關(guān)PDF資料
PDF描述
IRFN440 POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=8.0A)
IRFN450 POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.415ohm, Id=12A)
IRFNG40 POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=3.5ohm, Id=3.9A)
IRFNG50 POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=2.0ohm, Id=5.5A)
IRFP15N60L HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFN440 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 8A 3SMD-1 - Bulk
IRFN450 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 12A 3SMD-1 - Bulk
IRFN5210 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:P-CHANNEL POWER MOSFET
IRFN9130SMD05 制造商:未知廠家 制造商全稱:未知廠家 功能描述:P-Channel
IRFN9140 制造商:International Rectifier 功能描述:EXFET, Hi-Rel, -100v, -18A, .32 Ohohms, SMD-1 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 18A 3SMD-1 - Bulk 制造商:International Rectifier 功能描述:P CHANNEL MOSFET, -100V, 18A, SMD-1; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V ;RoHS Compliant: No