- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄384496 > IRFM064 (International Rectifier) POWER MOSFET THRU-HOLE (TO-254AA) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRFM064 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET THRU-HOLE (TO-254AA) |
| 中文描述： | 功率MOSFET的通孔（對(duì)254AA） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | IRFM064 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
35*
35*
380
250
2.0
±20
620
—
—
4.5
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
g
PD - 90875A
HEXFET
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
o
C
A
POWER MOSFET
THRU-HOLE (TO-254AA)
1/29/02
www.irf.com
1
60V, N-CHANNEL
MOSFET TECHNOLOGY
HEXFET
TO-254AA
Product Summary
Part Number R
DS(on)
I
D
IRFM064 0.017
35A*
Features:
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
For footnotes refer to the last page
IRFM064
*Current is limited by pin diameter
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFM260 | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*) |
| IRFM440 | POWER MOSFET THRU-HOLE (TO-254AA) |
| IRFM460 | POWER MOSFET THRU-HOLE (TO-254AA) |
| IRFM8240 | POWER MOSFET THRU-HOLE (TO-254AA) |
| IRFP064N | Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFM064D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRFM064SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 35A 3PIN TO-254AA - Bulk |
| IRFM064SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 35A 3PIN TO-254AA - Bulk |
| IRFM064U | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRFM110 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1.5A I(D) | SOT-223 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。