參數(shù)資料
型號(hào): IRFM260
廠商: International Rectifier
英文描述: TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*)
中文描述: 晶體管N溝道(BVdss \u003d 200V的電壓,的Rds(on)\u003d 0.060ohm,身份證\u003d 35A條*)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 442K
代理商: IRFM260
Product Summary
Part Number
BV
DSS
R
DS(on)
0.060
I
D
IRFM260
200V
35A*
Features:
n
Hermetically Sealed
n
Electrically Isolated
n
Simple Drive Requirements
n
Ease of Paralleling
n
Ceramic Eyelet
Absolute Maximum Ratings
Parameter
Continuous Drain Current
IRFM260
35*
28
180
250
2.0
±20
700
35
25
4.3
-55 to 150
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300(0.063 in.(1.6mm) from case for 10s)
9.3 (typical)
g
N-CHANNEL
Provisional Data Sheet No. PD-9.1388A
Pre-Radiation
200Volt, 0.060
, HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET tran-
sistors. The efficient geometry design achieves very
low on-state resistance combined with high
transconductance.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re-
quired.
HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material be-
tween the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
IRFM260
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