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參數(shù)資料
| 型號(hào)： | IRFP064N |
| 廠(chǎng)商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 0.008ohm，身份證\u003d已廢除） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | IRFP064N |
IRFP064N
HEXFET
Power MOSFET
PD - 9.1383A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.008
I
D
= 110A
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
TO-247AC
8/25/97
Parameter
Max.
110
80
390
200
1.3
± 20
480
59
20
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Parameter
Typ.
–––
0.24
–––
Max.
0.75
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP064NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC |
| IRFP064NPBF | 功能描述:MOSFET MOSFT 55V 98A 8mOhm 113.3nCAC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP064NPBF-EL | 制造商:International Rectifier 功能描述: |
| IRFP064PBF | 功能描述:MOSFET N-Chan 60V 70 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP064V | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A) |
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