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參數(shù)資料
| 型號： | IRFB13N50A |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）最大值\u003d 0.450ohm，身份證\u003d 14A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 97K |
| 代理商： | IRFB13N50A |
12/10/01
www.irf.com
1
PD - 94339
SMPS MOSFET
HEXFET
Power MOSFET
R
DS(on)
max
0.450
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Benefits
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage
and Current
Applications
V
DSS
500V
I
D
14A
Parameter
Max.
14
9.1
56
250
2.0
± 30
9.2
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
A
W
W/
°
C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300
°
C
10
lbf
in (1.1N
m)
Absolute Maximum Ratings
Symbol
E
AS
I
AR
E
AR
Parameter
Typ.
–––
–––
–––
Max.
560
14
25
Units
mJ
A
mJ
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
TO-220AB
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
IRFB13N50A
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| IRFB16N60LPBF | 功能描述:MOSFET N-Chan 600V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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