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參數(shù)資料
| 型號(hào)： | IRF9Z24L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d- 60V的，的Rds（on）\u003d 0.28ohm，身份證\u003d- 11A條） |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 311K |
| 代理商： | IRF9Z24L |
IRF9Z24S/L
HEXFET
Power MOSFET
PD - 9.912A
V
DSS
= -60V
R
DS(on)
= 0.28
I
D
= -11A
D2
TO-262
8/25/97
S
D
G
l
Advanced Process Technology
l
Surface Mount (IRF9Z24S)
l
Low-profile through-hole (IRF9Z24L)
l
175°C Operating Temperature
l
Fast Switching
l
P- Channel
l
Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z24L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
Max.
-11
-7.7
-44
3.7
60
0.40
± 20
240
-11
6.0
-4.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Parameter
Typ.
–––
–––
Max.
2.5
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF9Z24S | Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A) |
| IRF9Z24N | Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) |
| IRF9Z24 | POWER MOSFET |
| IRF9Z24NL | Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) |
| IRF9Z24NS | Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF9Z24LPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRF9Z24N | 制造商:International Rectifier 功能描述:MOSFET P TO-220 |
| IRF9Z24NHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 12A 3-Pin(3+Tab) TO-220AB |
| IRF9Z24NL | 功能描述:MOSFET P-CH 55V 12A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF9Z24NLPBF | 功能描述:MOSFET P-CH 55V 12A TO-262 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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