參數(shù)資料
型號(hào)： IRF9952
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=+-30V)
中文描述： 功率MOSFET（減振鋼板基本\u003d - 30V的）
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 134K
代理商： IRF9952
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
30
± 20
T
A
= 25°C
T
A
= 70°C
3.5
2.8
16
1.7
-2.3
-1.8
-10
-1.3
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
I
DM
I
S
T
A
= 25°C
T
A
= 70°C
2.0
1.3
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
44
2.0
57
-1.3
mJ
A
mJ
V/ ns
0.25
5.0
-5.0
-55 to + 150 °C
PRELIMINARY
HEXFET
Power MOSFET
PD - 9.1561A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
8/25/97
SO-8
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Surface Mount
l
Very Low Gate Charge and
Switching Losses
l
Fully Avalanche Rated
IRF9952
Description
Thermal Resistance Ratings
Parameter
Symbol
R
θ
JA
Limit
62.5
Units
Maximum Junction-to-Ambient
°C/W
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
Symbol Maximum
Units
D1
N -C HA NN EL MOSF ET
1
P -CH AN N EL M OSF ET
D1
D2
D2
G 1
S2
G2
S1
Top View
8
2
3
4
5
6
7
N-Ch
P-Ch
V
DSS
30V
-30V
R
DS(on)
0.10
0.25
Recommended upgrade: IRF7309 or IRF7319
Lower profile/smaller equivalent: IRF7509
相關(guān)PDF資料
PDF描述
IRF9953 Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)
IRF9Z14S Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)
IRF9Z14 Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)
IRF9Z24L Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
IRF9Z24S Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF9952PBF 功能描述:MOSFET 30V DUAL N / P CH 20V VGS MAX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF9952QPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF9952QPBF_10 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPOWERMOSFET
IRF9952QTRPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF9952TR 功能描述:MOSFET N+P 30V 2.3A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
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